MRF325 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF325/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large- signal output and driver amplifier stages in 100 to 500 MHz frequency range. - Specified 28 Volt, 400 MHz Characteristics - Output Power = 30 Watts Minimum Gain = 8.5 d B Efficiency = 54% (Min) - Built- In Matching Network for Broadband Operation Using Internal Matching Techniques .. - 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR 30 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER TRANSISTOR NPN SILICON - Gold Metallization for High Reliability Applications MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current - Continuous Collector Current - Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 33 60 4.0 3.4 4.5 82 0.47 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C CASE 316- 01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.13 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (IC = 30 m Adc, IB = 0) Collector- Emitter Breakdown Voltage (IC = 30 m Adc, VBE = 0) Emitter- Base Breakdown Voltage (IE = 3.0 m Adc, IC = 0) Collector- Base Breakdown Voltage (IC = 30 m Adc, IE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO V(BR)CBO ICBO 33 60 4.0 60 - - - - - - - - - - 3.0 Vdc Vdc Vdc Vdc m Adc ON CHARACTERISTICS DC Current Gain (IC = 1.5 Adc, VCE = 5.0 Vdc) h FE 20 - 80 - NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1994 MRF325 2- 1 ELECTRICAL CHARACTERISTICS - continued (TC = 25°C unless otherwise...