The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
@Total Device Dissipation 1q = 25°C
Derate above 25°C Storage Temperature
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Symbol VCEO v CBO Vebo
Pd
Tsta
Value 100 100 3.5 2.5 14.3
-65 to +200
Unit Vdc Vdc Vdc Watts
mW/°C
°C
Symbol
Rfljc
Max
70
Unit °C/W
MRF531
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage dC = 0.1 mAdc, lg = 0)
Emitter-Base Breakdown Voltage E(l = 0.
MRF531 Datasheet
