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MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
@Total Device Dissipation T"c = 25°C
Derate above 25°C Storage Temperature
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Symbol vCEO VCBO VEBO
pd
T stg
Value 80 80 3.5 2.5 14.3
- 60 to + 200
Unit Volts Volts Volts Watts
mW/"C
°C
Symbol R&jc
Max
70
Unit °C/W
MRF532
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
PNP SILICON
f
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 10 mA)
Collector-Base Breakdown Voltage dC = 0.1 mA)
Emitter-Base Breakdown Voltage E(l = 0.1 mA)
Collector Cutoff Current
(VC e = 75 V)
ON CHARACTERISTICS
DC Current Gain dC = 5.
MRF532 Datasheet
