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MRF5S19130R3 - N-Channel Enhancement-Mode Lateral MOSFETs

General Description

Short RF Bead 0.8 pF Chip Capacitor, B Case 0.6 4.5 pF Gigatrim Variable Capacitors 2.2 pF Chip Capacitor, B Case 1.7 pF Chip Capacitor, B Case 9.1 pF Chip Capacitors, B Case 1 µF, 25 V Tantalum Capacitors 47 µF, 50 V Electrolytic Capacitor 0.1 µF Chip Capacitors, B Case 1000 pF Chip Capac

Key Features

  • = 1200 mA Pulsed CW, 8 µsec (on), 1 msec (off) Center Frequency = 1960 MHz 39 40 41 42 43 44 45 Ideal Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power.

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📁 Similar Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF5S19130SR3 N-Channel Enhancement-Mode Lateral MOSFETs
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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19130/D MRF5S19130R3 RF Power Field Effect Transistors MRF5S19130SR3 The RF MOSFET Line N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz.