N-channel Enhancement-mode Lateral MOSFETs
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MRF5S19130SR3 |
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| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 440.44 KB |
| Description | N-Channel Enhancement-Mode Lateral MOSFETs |
| Datasheet | MRF5S19130SR3 MRF5S19130R3 Datasheet (PDF) |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19130/D MRF5S19130R3 RF Power Field Effect Transistors MRF5S19130SR3 The RF MOSFET Line N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRF5S19130R3 | N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19100HR3 | The RF MOSFET Line RF Power Field Effect Transistors |
| MRF5S19100HSR3 | The RF MOSFET Line RF Power Field Effect Transistors |
| MRF5S19150R3 | RF Power Field Effect Transistors |
| MRF5S19150SR3 | RF Power Field Effect Transistors |
| MRF5S19090LR3 | N-CHANNEL RF POWER MOSFETs |
| MRF5S19090LSR3 | N-CHANNEL RF POWER MOSFETs |
| MRF5S21090LR3 | RF Power Field Effect Transistors |
| MRF5S21090LSR3 | RF Power Field Effect Transistors |
| MRF5S21130 | The RF MOSFET Line RF Power Field Effect Transistor |
