Rf Power Field Effect Transistors
| Part number | MRF5S19150R3 |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 450.77 KB |
| Description | RF Power Field Effect Transistors |
| Datasheet | MRF5S19150R3_Motorola.pdf |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19150/D MRF5S19150R3 RF Power Field Effect Transistors MRF5S19150SR3 The RF MOSFET Line N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRF5S19150SR3 | RF Power Field Effect Transistors |
| MRF5S19100HR3 | The RF MOSFET Line RF Power Field Effect Transistors |
| MRF5S19100HSR3 | The RF MOSFET Line RF Power Field Effect Transistors |
| MRF5S19130R3 | N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19130SR3 | N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19090LR3 | N-CHANNEL RF POWER MOSFETs |
| MRF5S19090LSR3 | N-CHANNEL RF POWER MOSFETs |
| MRF5S21090LR3 | RF Power Field Effect Transistors |
| MRF5S21090LSR3 | RF Power Field Effect Transistors |
| MRF5S21130 | The RF MOSFET Line RF Power Field Effect Transistor |
