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MRF5S19150SR3 - RF Power Field Effect Transistors

This page provides the datasheet information for the MRF5S19150SR3, a member of the MRF5S19150R3 RF Power Field Effect Transistors family.

Datasheet Summary

Description

Freescale Semiconductor, Inc.

Features

  • TICS η, DRAIN.

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Datasheet preview – MRF5S19150SR3

Datasheet Details

Part number MRF5S19150SR3
Manufacturer Motorola
File Size 450.77 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF5S19150SR3 Datasheet
Additional preview pages of the MRF5S19150SR3 datasheet.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19150/D MRF5S19150R3 RF Power Field Effect Transistors MRF5S19150SR3 The RF MOSFET Line N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, Pout = 32 Watts, IDQ = 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.
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