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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF6402/D
NPN Silicon RF Power Transistor
The MRF6402 is designed for 1.8 GHz Personal Communications Network (PCN) base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. For ease of design, this transistor has an internally matched input. • To be used in Class AB for PCN and Cellular Radio Applications • Specified 26 V, 1.88 GHz Characteristics Output Power — 4.5 Watts Gain — 10 dB Typ Efficiency — 45% Typ • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MRF6402
4.5 W, 1.
MRF6402 Datasheet
