Datasheet Summary
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF6409/D
NPN Silicon RF Power Transistor
The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.
- To be used in Class AB
- Specified 26 Volts, 960 MHz Characteristics Output Power
- 20 Watts CW Gain
- 11 dB Typ Efficiency
- 60% Typ
20 W, 960 MHz RF POWER TRANSISTOR NPN SILICON
CASE 319- 07, STYLE 2
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector- Current
- Continuous Total Device Dissipation @ TC = 25°C Derate above...