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MRF658 - RF POWER TRANSISTOR

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF658/D NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB Minimum Efficiency = 50% • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadband Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors for Improved Ruggedness • Silicon Nitride Passivated • Capable of Surviving Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 15.5 Vdc and 2.
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