Datasheet Summary
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF658/D
NPN Silicon RF Power Transistor
Designed for 12.5 Volt UHF large- signal, mon emitter, class- C amplifier applications in industrial and mercial FM equipment operating to 520 MHz.
- Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB Minimum Efficiency = 50%
- Characterized with Series Equivalent Large- Signal Impedance Parameters from 400 to 520 MHz
- Built- In Matching Network for Broadband Operation
- Triple Ion Implanted for More Consistent Characteristics
- Implanted Emitter Ballast Resistors for Improved Ruggedness
- Silicon Nitride Passivated
- Capable of...