MRF6V14300HR3 Datasheet | Motorola Semiconductor

Features MRF6V14300HR3 MRF6V14300HSR3 1400 MHz, 330 W, 50 V PULSED LATERAL N - CHANNEL RF POWER MOSFETs Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Greater Negative Gate - Source Voltage Range for Improved Class C Operation - Ro HS pliant - In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. - - - - - CASE 465 - 06, STYLE 1 NI - 780 MRF6V14300HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6V14300HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS Tstg TC TJ Value - 0.5, +100 - 6.0, +10 - 65 to +150 150 200 Unit Vdc Vdc °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 65°C, 330 W Pulsed, 300 μsec Pulse Width, 12% Duty Cycle Symbol RθJC Value (1,2) 0.13 Unit °C/W 1. MTTF calculator available at http://.freescale./rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://.freescale./rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. MRF6V14300HR3 MRF6V14300HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain- Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 m A) Zero Gate Voltage Drain Leakage Current .. (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS...