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MRF6V14300HR3 - RF Power Field Effect Transistors

General Description

43 pF Chip Capacitor 18 pF Chip Capacitor 33 pF Chip Capacitor 27 pF Chip Capacitor 2.2 μF, 100 V Chip Capacitor 470 μF, 63 V Electrolytic Capacitor 330 pF, 63 V Electrolytic Capacitor 0.1 μF, 35 V Chip Capacitor 10 μF, 35 V Tantalum Capacitor 10 Ω, 1/4 W Chip Resistor Part Number ATC100B430JT500XT

Key Features

  • MRF6V14300HR3 MRF6V14300HSR3 1400 MHz, 330 W, 50 V PULSED.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 2, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec, Duty Cycle = 12% Power Gain — 18 dB Drain Efficiency — 60.5% • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak Power www.DataSheet4U.