Datasheet Details
| Part number | MRF6V14300HR3 |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 439.03 KB |
| Description | RF Power Field Effect Transistors |
| Datasheet | MRF6V14300HR3_Motorola.pdf |
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Overview: Freescale Semiconductor Technical Data Document Number: MRF6V14300H Rev. 2, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec, Duty Cycle = 12% Power Gain — 18 dB Drain Efficiency — 60.5% • Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak Power www.DataSheet4U.
| Part number | MRF6V14300HR3 |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 439.03 KB |
| Description | RF Power Field Effect Transistors |
| Datasheet | MRF6V14300HR3_Motorola.pdf |
|
|
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MRF6V14300HR3 | RF Power Field Effect Transistors | NXP |
| Part Number | Description |
|---|---|
| MRF6V14300HSR3 | RF Power Field Effect Transistors |
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