MRF6V14300HR3
MRF6V14300HR3 is RF Power Field Effect Transistors manufactured by NXP Semiconductors.
Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
- Ro HS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF6V14300H Rev. 3, 4/2010
MRF6V14300HR3 MRF6V14300HSR3
1400 MHz, 330 W, 50 V PULSED
LATERAL N--CHANNEL RF POWER MOSFETs
CASE 465--06, STYLE 1 NI--780
CASE 465A--06, STYLE 1 NI--780S
MRF6V14300HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2)
VDSS
--0.5, +100
Vdc
--6.0, +10
Vdc
Tstg
-- 65 to +150
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value...
