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MRF9130LSR3 - 28 V LATERAL N-CHANNEL RF POWER MOSFETs

This page provides the datasheet information for the MRF9130LSR3, a member of the MRF9130LR3 28 V LATERAL N-CHANNEL RF POWER MOSFETs family.

Description

10 µF, 35 V Tantalum Capacitors, Vishay - Sprague #293D106X9035D 100 nF Chip Capacitors (1206), AVX #1206C104KATDA 22 pF, 100B Chip Capacitors, ATC #100B220C 33 pF, 100B Chip Capacitor, ATC #100B330JW 1.0 pF, 100B Chip Capacitor, ATC #100B1R0BW 4.7 pF, 100B Chip Capacitor, ATC #100B4R7BW 8.2 pF, 100

Features

  • .170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9130L/D The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts Output Power @ P1dB — 135 Watts Power Gain — 16.5 dB @ 130 Watts Output Power Efficiency — 48% @ 130 Watts Output Power • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection www.DataSheet4U.
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