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MRF9135LSR3 - 26 V LATERAL N-CHANNEL RF POWER MOSFETs

Download the MRF9135LSR3 datasheet PDF (MRF9135L included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 26 v lateral n-channel rf power mosfets.

Description

Short Ferrite Beads, Surface Mount 47 pF Chip Capacitors, B Case 0.6 4.5 Gigatrim Variable Capacitors 8.2 pF Chip Capacitor, B Case 0.8 8.0 Gigatrim Variable Capacitors 12 pF Chip Capacitors, B Case 20K pF Chip Capacitor, B Case 10 µF, 35 V Tantulum Capacitors 7.5 pF Chip Capacitors,

Features

  • OROLA RF DEVICE DATA IMD,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF9135L_Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola
  • MRF9135L - 26 V LATERAL N-CHANNEL RF POWER MOSFETs
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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9135L/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical N–CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1100 mA IS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 25 Watts Avg. Power Gain — 17.8 dB Efficiency — 25% Adjacent Channel Power — 750 kHz: –47 dBc @ 30 kHz BW • Internally Matched, for Ease of Use www.DataSheet4U.
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