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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
Low Noise, High-Frequency
Transistors
Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 9 Finger, 1.25 Micron Geometry with Gold Top Metal • Gold Sintered Back Metal • Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel • MRF947R, T3 is Emitter–Base Pin out reversed.