MSC2295-BT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MSC2295- BT1/D
NPN RF Amplifier Transistors Surface Mount
COLLECTOR 3
MSC2295-BT1 MSC2295-CT1
Motorola Preferred Devices
2 BASE
1 EMITTER
2 1
MAXIMUM RATINGS (TA = 25°C)
Rating Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current
- Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 30 20 5.0 30 Unit Vdc Vdc Vdc m Adc CASE 318D- 03, STYLE 1 SC- 59
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150
..
Unit m W °C °C
- 55 ~ +150
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Collector- Base Cutoff Current (VCB = 10 Vdc, IE = 0) DC Current Gain(1) (VCB = 10 Vdc, IC =
- 1.0 m Adc) Collector- Gain
- Bandwidth Product (VCB = 10 Vdc, IE =
- 1.0 m Adc) Reverse Transistor Capacitance (VCE = 10 Vdc, IC = 1.0 m Adc, f = 10.7 MHz) 1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. Symbol ICBO h FE MSC2295- BT1 MSC2295-...
