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MSC2295-BT1 - NPN RF Amplifier Transistors

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MSC2295–BT1/D NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS (TA = 25°C) Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 30 20 5.0 30 Unit Vdc Vdc Vdc mAdc CASE 318D–03, STYLE 1 SC–59 THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 www.DataSheet4U.com Unit mW °C °C – 55 ~ +150 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector–Base Cutoff Current (VCB = 10 Vdc, IE = 0) DC Current Gain(1) (VCB = 10 Vdc, IC = –1.