MSD42WT1 Datasheet | Motorola Semiconductor

.. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MSD42WT1/D Preliminary Information NPN Silicon General Purpose High Voltage Transistor This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. - Available in 8 mm, 7-inch/3000 Unit Tape and Reel Motorola Preferred Devices NPN GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS SURFACE MOUNT MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 300 300 6.0 150 Unit Vdc Vdc Vdc m Adc 1 2 CASE 419- 02, STYLE 3 SC- 70/SOT- 323 DEVICE MARKING MSD42WT1 = H1D COLLECTOR 3 THERMAL CHARACTERISTICS Rating Power Dissipation(1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 - 55 ~ + 150 Unit m W °C °C 1 BASE 2 EMITTER ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (IC = 1.0 m Adc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 µAdc, IE = 0) Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter- Base Cutoff Current (VEB = 6.0 Vdc, IB = 0) DC Current Gain(2) (VCE = 10 Vdc, IC = 1.0 m Adc) (VCE = 10 Vdc, IC = 30 m Adc) Collector-Emitter Saturation Voltage(2) (IC = 200 m Adc, IB = 2.0 m Adc) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO h FE1 h FE2 VCE(sat) Min 300 300 6.0 - - 25 40 - Max - - - 0.1 0.1 - - 0.5 Vdc Unit Vdc Vdc Vdc µA µA - 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum remended footprint. 2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. Preferred devices are Motorola remended choices for future use and best overall...