MSD42WT1 Datasheet | onsemi

MSD42WT1, MSD42T1 Preferred Device NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC- 59 packages which are designed for low power surface mount applications. Features http://onsemi. COLLECTOR 3 - Pb- Free Package is Available MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 300 300 6.0 150 Unit Vdc Vdc Vdc m Adc 1 2 Symbol PD TJ Tstg Max 150 150 Unit m W °C °C SC- 70 (SOT- 323) CASE 419 (SCALE 2:1) 3 2 1 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Rating Power Dissipation (Note 1) Junction Temperature Storage Temperature Range .. SC- 59 CASE 318D (SCALE 2:1) - 55X+ 150 MARKING DIAGRAMS ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (IC = 1.0 m Adc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 m Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 m Adc, IE = 0) Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter- Base Cutoff Current (VEB = 6.0 Vdc, IB = 0) DC Current Gain (Note 2) (VCE = 10 Vdc, IC = 1.0 m Adc) (VCE = 10 Vdc, IC = 30 m Adc) Collector-Emitter Saturation Voltage (Note 2) (IC = 20 m Adc, IB = 2.0 m Adc) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 300 300 6.0 - - Max - - - 0.1 0.1 Unit Vdc Vdc Vdc m A m A - h FE1 h FE2 VCE(sat) 25 40 - - - 0.5 Vdc 1D M J1D M 1D = Device Marking Code M = Date Code ORDERING INFORMATION Device MSD42WT1 Package Shipping† SC- 70/SOT- 323 3000/T ape & Reel MSD42WT1G SC- 70/SOT- 323 3000/T ape & Reel MSD42T1 SC- 59 3000/T ape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure,...