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MSD601-RT1 - NPN General Purpose Amplifier Transistors

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MSD601–RT1/D NPN General Purpose Amplifier Transistors Surface Mount COLLECTOR 3 MSD601-RT1 MSD601-ST1 *Motorola Preferred Device * MAXIMUM RATINGS (TA = 25°C) Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 50 7.0 100 200 2 BASE 1 EMITTER Unit Vdc Vdc Vdc mAdc mAdc 3 2 1 CASE 318D–03, STYLE 1 SC–59 THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 – 55 ~ +150 Unit mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector–Emitter Breakdown Voltage (IC = 2.