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MSD601-ST1 - NPN General Purpose Amplifier Transistors

Download the MSD601-ST1 datasheet PDF. This datasheet also covers the MSD601-RT1 variant, as both devices belong to the same npn general purpose amplifier transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

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📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSD601-RT1_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MSD601-ST1 NPN General Purpose Amplifier Transistors ETL
MSD601-ST1 NPN General Purpose Amplifier Transistors Leshan Radio Company
MSD601-ST1 NPN General Purpose Amplifier Transistors ON Semiconductor
MSD601-RT1 NPN General Purpose Amplifier Transistors ETL
MSD601-RT1 NPN General Purpose Amplifier Transistors Leshan Radio Company

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MSD601-RT1 NPN General Purpose Amplifier Transistors
MSD602-RT1 NPN General Purpose Amplifier Transistor Surface Mount
MSD6100 Dual Switching Diode Common Cathode
MSD6102 DUAL DIODE COMMON CATHODE
MSD6150 Dual Diode Common Anode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MSD601–RT1/D NPN General Purpose Amplifier Transistors Surface Mount COLLECTOR 3 MSD601-RT1 MSD601-ST1 *Motorola Preferred Device * MAXIMUM RATINGS (TA = 25°C) Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current — Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 50 7.0 100 200 2 BASE 1 EMITTER Unit Vdc Vdc Vdc mAdc mAdc 3 2 1 CASE 318D–03, STYLE 1 SC–59 THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 – 55 ~ +150 Unit mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector–Emitter Breakdown Voltage (IC = 2.