MSD601-ST1 - NPN General Purpose Amplifier Transistors

Leshan Radio Company

Download the MSD601-ST1 datasheet PDF. This datasheet also covers the MSD601-RT1 variant, as both devices belong to the same npn general purpose amplifier transistors family and are provided as variant models within a single manufacturer datasheet.

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MSD601-ST1 npn general purpose amplifier transistors by Leshan Radio Company - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MSD601-RT1_LeshanRadioCompany.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MSD601-ST1
Manufacturer	Leshan Radio Company
File Size	68.86 KB
Description	NPN General Purpose Amplifier Transistors
Datasheet	MSD601-ST1 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MSD601-ST1	NPN General Purpose Amplifier Transistors	ETL
MSD601-ST1	NPN General Purpose Amplifier Transistors	Motorola
MSD601-ST1	NPN General Purpose Amplifier Transistors	ON Semiconductor
MSD601-RT1	NPN General Purpose Amplifier Transistors	ETL
MSD601-RT1	NPN General Purpose Amplifier Transistors	Motorola

Other Datasheets by Leshan Radio Company

Part Number	Description
MSD601-RT1	NPN General Purpose Amplifier Transistors
MSD602-RT1	NPN General Purpose Amplifier Transistor
MSD1010T1	Low Saturation Voltage

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistors Surface Mount COLLECTOR 3 MSD601–RT1 MSD601–ST1 3 2 2 BASE 1 EMITTER CASE 1 MAXIMUM RATINGS (T A = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current–Continuous Collector Current–Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC I C(P) Symbol PD TJ T stg Value 60 50 7.0 100 200 Max 200 150 –55 ~ +150 Unit Vdc Vdc Vdc mAdc mAdc Unit mW °C °C Symbol V(BR)CEO V(BR)CBO V(BR)EBO I CBO I CEO hFE1 hFE2 VCE(sat) Min 50 60 7.0 — — 210 290 90 — 318D–03, STYLE1 SC–59 THERMAL CHARACTERISTICS Characteristic Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 25°C) Characteristic Collector-Emitter Breakdown Voltage (IC = 2.