| Part Number | MSD601-ST1 |
|---|---|
| Manufacturer | onsemi |
| Overview |
MSD601−RT1, MSD601−ST1
Preferred Device
NPN General Purpose Amplifier Transistors Surface Mount
Features
• Pb−Free Packages are Available
http://onsemi.com
COLLECTOR 3
MAXIMUM RATINGS (TA = 25°C)
.
* Pb *Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C) Rating Collector * Base Voltage Collector * Emitter Voltage Emitter * Base Voltage Collector Current * Continuous Collector Current * Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 50 7.0 100 200 . |
MSD601-ST1 Datasheet
The MSD601-ST1 is a NPN General Purpose Amplifier Transistors.
| Part Number | MSD601-ST1 |
|---|---|
| Description | NPN General Purpose Amplifier Transistors |
| Manufacturer | Leshan Radio Company |
| Overview |
LESHAN RADIO COMPANY, LTD.
NPN General Purpose Amplifier Transistors Surface Mount
COLLECTOR 3
MSD601–RT1 MSD601–ST1
3
2
2 BASE
1 EMITTER
CASE
1
MAXIMUM RATINGS (T A = 25°C)
Rating Collector-Ba.
CE = 10 Vdc, I B = 0) DC Current Gain (1) (V CE = 10 Vdc, I C = 2.0 mAdc) MSD601-RT1 MSD601-ST1 (V CE = 2.0 Vdc, I C = 100 mAdc) Collector-Emitter Saturation Voltage (I C = 100 mAdc, I B = 10 mAdc) 1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%. Max * * * 0.1 100 340 460 * 0.5 Unit Vdc Vdc Vdc µAdc. |
| Part Number | MSD601-ST1 |
|---|---|
| Description | NPN General Purpose Amplifier Transistors |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA SEMICONDUCTOR TECHNICAL DATA
Order this document by MSD601–RT1/D
NPN General Purpose Amplifier Transistors Surface Mount
COLLECTOR 3
MSD601-RT1 MSD601-ST1
*Motorola Preferred Device
*
M.
Current Gain(1) (VCE = 10 Vdc, IC = 2.0 mAdc) (VCE = 2.0 Vdc, IC = 100 mAdc) Collector *Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) 1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. MSD601 *RT1 MSD601 *ST1 Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 hFE2 VCE(sat) Min 50 60 7.0 * * 210 . |
| Part Number | MSD601-ST1 |
|---|---|
| Description | NPN General Purpose Amplifier Transistors |
| Manufacturer | ETL |
| Overview |
NPN General Purpose Amplifier Transistors Surface Mount
COLLECTOR 3
MSD601–RT1 MSD601–ST1
3
1
2 BASE
1 EMITTER
CASE
2
MAXIMUM RATINGS (T A = 25°C)
Rating Collector-Base Voltage Collector-Emitter.
rrent Gain (1) (V CE = 10 Vdc, I C = 2.0 mAdc) MSD601-RT1 MSD601-ST1 (V CE = 2.0 Vdc, I C = 100 mAdc) Collector-Emitter Saturation Voltage (I C = 100 mAdc, I B = 10 mAdc) 1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%. Max * * * 0.1 100 340 460 * 0.5 Unit Vdc Vdc Vdc µAdc nAdc * Vdc DEVICE MARKING. |