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MTB15N06E Datasheet Tmos Power Fet

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB15N06E/D ™ Data Sheet TMOS E-FET.

Key Features

  • drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 4 Motorola TMOS Power MOSFET Transistor Device Data MTB15N06E 1250 VDS = 0 200 t, TIME (ns) 100 1000 VGS = 0 TJ = 25°C VDD = 30 V ID = 15 A VGS.

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