MTB2P50E Datasheet Tmos Power Fet

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB2P50E/D ™ Data Sheet TMOS E-FET.

Datasheet Details

Part number	MTB2P50E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	273.90 KB
Description	TMOS POWER FET
Datasheet	MTB2P50E_Motorola.pdf

sistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily ac.