| Part number | MTB4N80E |
|---|---|
| Datasheet | MTB4N80E_Motorola.pdf |
| File Size | 195.75 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
|
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB4N80E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount ponents...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTB4N80E1 | TMOS POWER FET |
| MTB40N10E | TMOS POWER FET |
| MTB10N40E | TMOS POWER FET |
| MTB1306 | TMOS POWER FET |
| MTB15N06E | TMOS POWER FET |
| MTB15N06V | TMOS POWER FET |
| MTB16N25E | TMOS POWER FET |
| MTB1N100E | TMOS POWER FET |
| MTB20N20E | TMOS POWER FET |
| MTB23P06E | TMOS POWER FET |
