| Part number | MTB4N80E1 |
|---|---|
| Datasheet | MTB4N80E1_Motorola.pdf |
| File Size | 160.35 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB4N80E1/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight Lead N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy in the...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTB4N80E | TMOS POWER FET |
| MTB40N10E | TMOS POWER FET |
| MTB10N40E | TMOS POWER FET |
| MTB1306 | TMOS POWER FET |
| MTB15N06E | TMOS POWER FET |
| MTB15N06V | TMOS POWER FET |
| MTB16N25E | TMOS POWER FET |
| MTB1N100E | TMOS POWER FET |
| MTB20N20E | TMOS POWER FET |
| MTB23P06E | TMOS POWER FET |
