| Part number | MTB40N10E |
|---|---|
| Datasheet | MTB40N10E_Motorola.pdf |
| File Size | 192.96 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
|
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB40N10E/D Advance Data Sheet TMOS E-FET.™ Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
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| MTB20N20E | TMOS POWER FET |
| MTB23P06E | TMOS POWER FET |
