| Part number | MTB6N60E1 |
|---|---|
| Datasheet | MTB6N60E1_Motorola.pdf |
| File Size | 160.57 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB6N60E1/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK-SL Straight Lead N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MTB6N60E1 | High Energy Power FET | ON Semiconductor |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTB6N60E | TMOS POWER FET |
| MTB60N06HD | TMOS POWER FET |
| MTB10N40E | TMOS POWER FET |
| MTB1306 | TMOS POWER FET |
| MTB15N06E | TMOS POWER FET |
| MTB15N06V | TMOS POWER FET |
| MTB16N25E | TMOS POWER FET |
| MTB1N100E | TMOS POWER FET |
| MTB20N20E | TMOS POWER FET |
| MTB23P06E | TMOS POWER FET |
