| Part number | MTB6N60E1 |
|---|---|
| Datasheet | MTB6N60E1-ONSemiconductor.pdf |
| File Size | 204.86 KB |
| Manufacturer | onsemi |
| Description | High Energy Power FET |
|
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MTB6N60E1 TMOS E−FET.™ High Energy Power FET D2PAK−SL Straight Lead N−Channel Enhancement−Mode Silicon Gate http://onsemi. This advanced TMOS E−FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MTB6N60E1 | TMOS POWER FET | Motorola |
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