MTB6N60E1 - High Energy Power FET

onsemi

Key Features

duces switching losses. 3200 VDS = 0 V VGS = 0 V Ciss 2400 TJ = 25°C 10000 TJ = 25°C VGS = 0 V 1000 Ciss C,.

MTB6N60E1 high energy power fet by onsemi - Datasheet Preview

Datasheet Details

Part number	MTB6N60E1
Manufacturer	onsemi
File Size	204.86 KB
Description	High Energy Power FET
Datasheet	MTB6N60E1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MTB6N60E1 TMOS E−FET.™ High Energy Power FET D2PAK−SL Straight Lead N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.