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MTB6N60E1 - High Energy Power FET

Datasheet Summary

Features

  • duces switching losses. 3200 VDS = 0 V VGS = 0 V Ciss 2400 TJ = 25°C 10000 TJ = 25°C VGS = 0 V 1000 Ciss C,.

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Datasheet preview – MTB6N60E1

Datasheet Details

Part number MTB6N60E1
Manufacturer ON Semiconductor
File Size 204.86 KB
Description High Energy Power FET
Datasheet download datasheet MTB6N60E1 Datasheet
Additional preview pages of the MTB6N60E1 datasheet.

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Full PDF Text Transcription

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MTB6N60E1 TMOS E−FET.™ High Energy Power FET D2PAK−SL Straight Lead N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
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