Datasheet4U Logo Datasheet4U.com

MTB75N05HD - TMOS POWER FET

Features

  • unction of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. I.

📥 Download Datasheet

Datasheet preview – MTB75N05HD

Datasheet Details

Part number MTB75N05HD
Manufacturer Motorola
File Size 254.49 KB
Description TMOS POWER FET
Datasheet download datasheet MTB75N05HD Datasheet
Additional preview pages of the MTB75N05HD datasheet.

📁 Similar Datasheet

  • MTB75N05HD - Power MOSFET (ON Semiconductor)
  • MTB75N06HD - Power MOSFET (ON Semiconductor)
  • MTB7D5N10RH8 - N-Channel Enhancement Mode Power MOSFET (CYStech Electronics)
  • MTB - METALLIZED POLYESTER FILM CAPACITORS (RUBYCON CORPORATION)
  • MTB-F000329MNHNAA-B - LCD Module (Microtips)
  • MTB-F000368MNHNAA - LCD Module (Microtips)
  • MTB001 - High Output Interface Driver ICs (Shindengen Electric)
  • MTB001D01-1 - LCD Module (CSOT)
  • MTB010A03H8 - Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
  • MTB010A06RH8 - Dual N-Channel Enhancement Mode Power MOSFET (CYStech)
Other Datasheets by Motorola

Full PDF Text Transcription

Click to expand full text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB75N05HD/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time.
Published: |