Datasheet4U Logo Datasheet4U.com

MTB75N05HD - Power MOSFET

Features

  • were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board.
  • mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an.

📥 Download Datasheet

Datasheet preview – MTB75N05HD

Datasheet Details

Part number MTB75N05HD
Manufacturer ON Semiconductor
File Size 236.42 KB
Description Power MOSFET
Datasheet download datasheet MTB75N05HD Datasheet
Additional preview pages of the MTB75N05HD datasheet.
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MTB75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Published: |