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MTB75N06HD - Power MOSFET

Features

  • es. 7000 VDS = 0 V 6000 Ciss 5000 VGS = 0 V TJ = 25°C C,.

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Datasheet preview – MTB75N06HD

Datasheet Details

Part number MTB75N06HD
Manufacturer ON Semiconductor
File Size 282.14 KB
Description Power MOSFET
Datasheet download datasheet MTB75N06HD Datasheet
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MTB75N06HD Preferred Device Power MOSFET 75 Amps, 60 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
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