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MTB75N03HDL - TMOS POWER FET

Features

  • rd mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 15000 Ciss VDS = 0 V VGS = 0 V TJ = 25°C 12000 C,.

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Datasheet preview – MTB75N03HDL

Datasheet Details

Part number MTB75N03HDL
Manufacturer Motorola
File Size 304.84 KB
Description TMOS POWER FET
Datasheet download datasheet MTB75N03HDL Datasheet
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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB75N03HDL/D Advanced Information HDTMOS E-FET.™ High Density Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time.
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