Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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HDTMOS E-FETāā™ High Density Power FET DPAK for Surface Mount or Insertion Mount
N- Channel Enhancement- Mode Silicon Gate
This advanced high- cell density HDTMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low- voltage, high- speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits, and inductive loads. The avalanche energy capability is specified to eliminate the...
