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MTD20N06HDL - Power MOSFET

Key Features

  • speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25°C GATE.
  • TO.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MTD20N06HD TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM
MTD20N06V TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
MTD20N03HDL TMOS POWER FET
MTD20P03HDL TMOS POWER FET
MTD20P06HDL TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document bt MTD20N06HDL/D Advance Information HDTMOS E-FETāā™ High Density Power FET DPAK for Surface Mount or Insertion Mount N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits, and inductive loads.