MTD20N06HDL Overview
MTD20N06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low−voltage, high−speed switching applications in power supplies, converters and PWM motor controls, these devices are...
MTD20N06HDL Key Features
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time parable to a Discrete
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Pb-Free Package is Available
- Continuous
- Non-Repetitive (tp ≤ 10 ms)
- Continuous @ 25°C Drain Current
- Continuous @ 100°C Drain Current
- Single Pulse (tp ≤ 10 ms)
