MTD20N06HDL - Power MOSFET

onsemi

Key Features

Avalanche Energy Specified.
Source.
to.
Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
Diode is Characterized for Use in Bridge Circuits.
IDSS and VDS(on) Specified at Elevated Temperature.
Pb.
Free Package is Available.

MTD20N06HDL power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	MTD20N06HDL
Manufacturer	onsemi
File Size	223.36 KB
Description	Power MOSFET
Datasheet	MTD20N06HDL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MTD20N06HDL Preferred Device Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low−voltage, high−speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.