Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTD20N03HDL/D
™ Data Sheet HDTMOS E-FET.™ High Density Power FET DPAK for Surface Mount
Designer's
Motorola Preferred Device
N- Channel Enhancement- Mode Silicon Gate
This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and...
