Datasheet Details
| Part number | MTD20N06V |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 257.36 KB |
| Description | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| Datasheet | MTD20N06V_Motorola.pdf |
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Overview: MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06V/D TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
| Part number | MTD20N06V |
|---|---|
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| File Size | 257.36 KB |
| Description | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| Datasheet | MTD20N06V_Motorola.pdf |
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|
|
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MTD20N06HDL | Power MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
| MTD20N06HD | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM |
| MTD20N06HDL | Power MOSFET |
| MTD20N03HDL | TMOS POWER FET |
| MTD20P03HDL | TMOS POWER FET |
| MTD20P06HDL | TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM |
| MTD2955E | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM |
| MTD2955V | Power Field Effect Transistor |
| MTD2N40E | TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM |
| MTD2N50E | TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
| MTD10N05E | TMOS4 POWER FET |