MTD20N06V - TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

Motorola Semiconductor (now NXP Semiconductors)

Key Features

of TMOS V.
On.
resistance Area Product about One.
half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology.
Faster Switching than E.
FET Predecessors ™ Data Sheet V™ MTD20N06V TMOS POWER FET 20.

MTD20N06V tmos power fet 20 amperes 60 volts rds(on) = 0.080 ohm by Motorola Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MTD20N06V
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	257.36 KB
Description	TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
Datasheet	MTD20N06V Datasheet

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
MTD20N06HD	TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM
MTD20N06HDL	Power MOSFET
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MTD20P06HDL	TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

Full PDF Text Transcription (Reference)

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06V/D TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.