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MTD3055VL - TMOS POWER FET

Features

  • of TMOS V.
  • On.
  • resistance Area Product about One.
  • half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology.
  • Faster Switching than E.
  • FET Predecessors Features Common to TMOS V and TMOS E.
  • FETS.
  • Avalanche Energy Specified.
  • IDSS and VDS(on) Specified at Elevated Temperature.
  • Static Parameters are the Same for both TMOS V and TMOS E.
  • FET.
  • Surface Mount Package Available in 16 mm 13.
  • inc.

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Datasheet preview – MTD3055VL

Datasheet Details

Part number MTD3055VL
Manufacturer Motorola
File Size 209.48 KB
Description TMOS POWER FET
Datasheet download datasheet MTD3055VL Datasheet
Additional preview pages of the MTD3055VL datasheet.

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Full PDF Text Transcription

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD3055VL/D TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.
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