| Part number | MTD4N20E |
|---|---|
| Datasheet | MTD4N20E_Motorola.pdf |
| File Size | 268.86 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET 4.0 AMPERES 200 VOLTS RDS(on) = 1.2 OHM |
|
|
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD4N20E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD4N20E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTD4P05 | (MTD4P05 / MTD4P06) POWER FIELD EFFECT TRANSISTOR |
| MTD4P06 | (MTD4P05 / MTD4P06) POWER FIELD EFFECT TRANSISTOR |
| MTD4P06 | POWER FIELD EFFECT TRANSISTOR |
| MTD10N05E | TMOS4 POWER FET |
| MTD12N06EZL | High Energy Power FET DPAK |
| MTD1302 | TMOS POWER FET |
| MTD15N06V | TMOS POWER FET |
| MTD15N06VL | TMOS POWER FET |
| MTD1N40 | POWER FIELD EFFECT TRANSISTOR |
| MTD1N50E | TMOS POWER FET |
