| Part number | MTD12N06EZL |
|---|---|
| Datasheet | MTD12N06EZL-Motorola.pdf |
| File Size | 230.76 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | High Energy Power FET DPAK |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD12N06EZL/D Designer’s™ Data Sheet TMOS E−FET.™ MTD12N06EZL High Energy Power FET DPAK for Surface Mount or Insertion Mount N−Channel Enhancement−Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM This advanced TMOS power FET is designed to withstand high energy in the avalanche and mode and switch efficiently. This new high energy...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
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