| Part number | MTD1302 |
|---|---|
| Datasheet | MTD1302_Motorola.pdf |
| File Size | 200.56 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
|
|
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1302/D Advance Information HDTMOS E-FET ™ High Density Power FET DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage,...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTD10N05E | TMOS4 POWER FET |
| MTD12N06EZL | High Energy Power FET DPAK |
| MTD15N06V | TMOS POWER FET |
| MTD15N06VL | TMOS POWER FET |
| MTD1N40 | POWER FIELD EFFECT TRANSISTOR |
| MTD1N50E | TMOS POWER FET |
| MTD1N60E | TMOS POWER FET |
| MTD1N80E | TMOS POWER FET |
| MTD1P50E | TMOS POWER FET |
| MTD20N03HDL | TMOS POWER FET |
