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MTH20P08 - Power EFT

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MOTOROLA SEMICONDUCTOR~ TECHNICAL DATA Designer’s Data sheet Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS These TMOS Power FETs are designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C Designer’s Data — IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature Rugged — SOA is Power Dissipation Limited Source-to-Drain Diode Characterized for Use With Inductive Loads Order this data sheet by MTH20P08/D -.....z D 4G m MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1 MO) Gate-Source Voltage Drain Current .,.. ,,:*& ,,~.,!... :7 .i~.$.!%, ,....?.
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