MTH20P08 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTH20P08 |
|---|---|
| Datasheet | MTH20P08-Motorola.pdf |
| File Size | 575.87 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | Power EFT |
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MOTOROLA SEMICONDUCTOR~ TECHNICAL DATA Designer’s Data sheet Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS These TMOS Power FETs are designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Silicon Gate for Fast Switching Speeds Switching Times Specified at 100°C Designer’s Data IDSS, VDS(on), VGS(th) and...
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTH20P10 | Power EFT |
| MTH40N05 | Power Field Effect Transistor |
| MTH40N06 | Power Field Effect Transistor |
| MTH40N08 | Power Field Effect Transistor |
| MTH40N10 | Power Field Effect Transistor |
| MTH8N35 | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS |
| MTH8N55 | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS |
| MTH8N60 | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS |
