Datasheet4U Logo Datasheet4U.com

MTH20P10 - Power EFT

Download the MTH20P10 datasheet PDF (MTH20P08 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power eft.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MTH20P08-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

  • MTH200 - (MTH200 - MTH800) 3 PHASE FULL WAVE BRIDGE RECTIFIER (Microsemi Corporation)
  • MTH15N35 - (MTH15N35 / MTH15N40) N-Channel Enhancement-Mode Silicon Gate TMOS (Motorola Semiconductor)
  • MTH15N40 - (MTH15N35 / MTH15N40) N-Channel Enhancement-Mode Silicon Gate TMOS (Motorola Semiconductor)
  • MTH15N40 - High Voltage Power MOSFET (Semiconductor Technology)
  • MTH400 - (MTH200 - MTH800) 3 PHASE FULL WAVE BRIDGE RECTIFIER (Microsemi Corporation)
  • MTH40N06 - N-Channel Enhancement Mode Power MOS Transistors (ST Microelectronics)
  • MTH40N06FI - N-Channel Enhancement Mode Power MOS Transistors (ST Microelectronics)
  • MTH600 - (MTH200 - MTH800) 3 PHASE FULL WAVE BRIDGE RECTIFIER (Microsemi Corporation)
  • MTH6N60FI - N-Channel MOSFET (STMicroelectronics)
  • MTH800 - (MTH200 - MTH800) 3 PHASE FULL WAVE BRIDGE RECTIFIER (Microsemi Corporation)
Other Datasheets by Motorola
  • MTH20P08 - Power EFT
  • MTH40N05 - Power Field Effect Transistor
  • MTH40N06 - Power Field Effect Transistor
  • MTH40N08 - Power Field Effect Transistor
  • MTH40N10 - Power Field Effect Transistor
  • MTH8N35 - Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
  • MTH8N55 - Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
  • MTH8N60 - Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS

Full PDF Text Transcription

Click to expand full text
MOTOROLA SEMICONDUCTOR~ TECHNICAL DATA Designer’s Data sheet Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS These TMOS Power FETs are designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C Designer’s Data — IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature Rugged — SOA is Power Dissipation Limited Source-to-Drain Diode Characterized for Use With Inductive Loads Order this data sheet by MTH20P08/D -.....z D 4G m MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1 MO) Gate-Source Voltage Drain Current .,.. ,,:*& ,,~.,!... :7 .i~.$.!%, ,....?.
Published: |