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MOTOROLA
SEMICONDUCTOR~
TECHNICAL DATA
Designer’s Data sheet
Power Field Effect Transistor
P-Channel Enhancement Mode Silicon Gate TMOS
These TMOS Power FETs are designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
Silicon Gate for Fast Switching Speeds — Switching Times Specified at 100°C
Designer’s Data — IDSS, VDS(on), VGS(th) and SOA Specified at Elevated Temperature
Rugged — SOA is Power Dissipation Limited Source-to-Drain Diode Characterized for Use With Inductive
Loads
Order this data sheet by MTH20P08/D
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D
4G
m MAXIMUM RATINGS
Rating
Drain-Source Voltage Drain-Gate Voltage
(RGS = 1 MO) Gate-Source Voltage Drain Current
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MTM20P08 Datasheet
