MTP10N10E Datasheet | Motorola Semiconductor

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N10E/D TMOS IV Power Field Effect Transistor This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and mutation modes. These new energy efficient devices also offer drain- to- source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients. - Internal Source- to- Drain Diode...