MTP10N10E Description
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N10E/D TMOS IV Power Field Effect Transistor This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and mutation modes. These new energy efficient devices also offer drain to source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies,...