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MTP10N10E Datasheet Tmos Power Fets

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N10E/D TMOS IV Power Field Effect Transistor This advanced “E” series of TMOS power MOSFETs is designed to withstand high.

Key Features

  • during trr as the diode goes from conduction to reverse blocking. VDS(pk) is the peak drain.
  • to.
  • source voltage that the device must sustain during commutation; IFM is the maximum forward source-drain diode current just prior to the onset of commutation. VR is specified at 80% of V(BR)DSS to ensure that the CSOA stress is maximized as IS decays from IRM to zero. RGS should be minimized during commutation. TJ has only a second order effect on CSOA. Stray inductances in Motorola’s t.

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