MTP10N10EL Description
MTP10N10EL Preferred Device Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well...
MTP10N10EL Key Features
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time parable to a Discrete
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Pb-Free Package is Available
- Continuous
- Non-Repetitive (tp ≤ 10 ms)
- Continuous @ TC = 25°C
- Continuous @ TC = 100°C
- Single Pulse (tp ≤ 10 ms)