| Part number | MTP10N40E |
|---|---|
| Datasheet | MTP10N40E_Motorola.pdf |
| File Size | 249.40 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP10N40E TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTP10N05 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs |
| MTP10N06 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs |
| MTP10N10E | TMOS POWER FETs |
| MTP10N10EL | TMOS POWER FET |
| MTP10N15 | POWER FIELD EFFECT TRANSISTOR |
| MTP10N25 | POWER FIELD EFFECT TRANSISTOR |
| MTP12N05E | POWER FIELD EFFECT TRANSISTOR |
| MTP12N06EZL | TMOS POWER FET |
| MTP12N10E | TMOS POWER FET |
| MTP12P06 | (MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR |
