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MTP15N06V Datasheet Tmos Power Fet

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP15N06V TMOS V Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ™ Data Sheet MTP15N06V Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.

Key Features

  • of TMOS V.
  • On.
  • resistance Area Product about One.
  • half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology.
  • Faster Switching than E.
  • FET Predecessors Features Common to TMOS V and TMOS E.
  • FETS.
  • Avalanche Energy Specified.
  • IDSS and VDS(on) Specified at Elevated Temperature.
  • Static Parameters are the Same for both TMOS V and TMOS E.
  • FET.

Similar Datasheet

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More Datasheets from Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MTP15N06VL TMOS POWER FET
MTP15N06L (MTP15N05L / MTP15N06L) POWER FIELD EFFECT TRANSISTOR
MTP15N05EL POWER FIELD EFFECT TRANSISTOR
MTP15N05L (MTP15N05L / MTP15N06L) POWER FIELD EFFECT TRANSISTOR
MTP15N08EL N-CHANNEL ENHANCEMENT-MODE SILICON GATE
MTP15N15 POWER FIELD EFFECT TRANSISTOR
MTP10N05 (MTP10N05 / MTP10N06) N-Channel Power MOSFETs
MTP10N06 (MTP10N05 / MTP10N06) N-Channel Power MOSFETs
MTP10N10E TMOS POWER FETs
MTP10N10EL TMOS POWER FET

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