MTP15N06V
MTP15N06V is Power MOSFET manufactured by onsemi.
Preferred Device
Power MOSFET 15 Amps, 60 Volts
N- Channel TO- 220
This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain- Source Voltage
Drain- Gate Voltage (RGS = 1.0 MΩ)
Gate- Source Voltage
- Continuous
- Single Pulse (tp ≤ 50 μs)
Drain Current
- Continuous @ 25°C Drain Current
- Continuous @ 100°C Drain Current
- Single Pulse (tp ≤ 10 μs)
Total Power Dissipation @ 25°C Derate above 25°C
VDSS VDGR
VGS VGSM
ID ID IDM PD
60 60
± 20 ± 25 15 8.7 45 55 0.5
Operating and Storage Temperature Range
TJ, Tstg
- 55 to 175
Single Pulse Drain- to- Source Avalanche Energy
- Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 15 Apk, L = 1.0 m H, RG = 25 Ω)
Thermal Resistance
- Junction to Case Thermal Resistance
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
RθJC RθJA
2.73 62.5 260
Unit Vdc Vdc
Vdc Vpk Adc Apk Watts W/°C °C m...
