MTP15N06VL Datasheet | Motorola Semiconductor

Features of TMOS V - On- resistance Area Product about One- half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology - Faster Switching than E- FET Predecessors G S CASE 221A- 06, Style 5 TO- 220AB Features mon to TMOS V and TMOS E- FETS - Avalanche Energy Specified - IDSS and VDS(on) Specified at Elevated Temperature - Static Parameters are the Same for both TMOS V and TMOS E- FET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain- to- Source Voltage Drain- to- Gate Voltage (RGS = 1.0 MΩ) Gate- to- Source Voltage - Continuous Gate- to- Source Voltage - Non- repetitive (tp ≤ 10 ms) Drain Current - Continuous Drain Current - Continuous @ 100°C Drain Current - Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 15 Apk, L = 1.0 m H, RG = 25 Ω) Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL Value 60 60 ± 15 ± 25 15 12 53 60 0.40 - 55 to 175 113 2.5 62.5 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C m J °C/W °C Designer’s Data for “Worst Case” Conditions - The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves - representing boundaries on device characteristics - are given to facilitate “worst case” design. E- FET, Designer’s, and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. REV 1 TMOS © Motorola Motorola, Inc. 1996 Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain- to- Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 m Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS...